A 2.1 to 4.6 GHz Wideband Low Noise Amplifier Using ATF10136
نویسندگان
چکیده
This paper presents a novel lownoise amplifier (LNA) for the 2 to 4.6 GHz applications. The LNA uses a circuit topology consisting of two gain stages with two feedback loops using ATF technology. The noise figure of this LNA varies from 1.5 to 5.4 dB, and its gain varies from 5 to 13 dB throughout the operating frequency band.The S11 and S21 simulated and measured results are presented, and show good agreement. Index Terms — low noise amplifier, ATFtechnology, feedback amplifier.
منابع مشابه
A New Ultra-Wideband Low Noise Amplifier With Continuous Gain Control
This paper presents a new variable gain low noise amplifier (VG-LNA) for ultra-wideband (UWB) applications. The proposed VG-LNA uses a common-source (CS) with a shunt-shunt active feedback as an input stage to realize input matching and partial noise cancelling. An output stage consists of a gain-boosted CS cascode and a gain control circuit that moves the high resonant frequency to higher freq...
متن کاملA High Gain and Forward Body Biastwo-stage Ultra-wideband Low Noise Amplifier with Inductive Feedback in 180 nm CMOS Process
This paper presents a two-stage low-noise ultra-wideband amplifier to obtain high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. First stage is designed about 3GHz frequency and second stage is designed about 8GHz. In simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used.Simulations results ...
متن کاملDesign and Fabrication of a 911 GHz Balanced Low Noise Amplifier Using HJFET
This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...
متن کاملA Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...
متن کاملA Millimeter-Wave (23-32 GHz) Wideband BiCMOS Low-Noise Amplifier
This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is imple...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2013